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초록
Transmission electron microscopy images showed that colloidal ZnO quantum dots (QDs) were distributed around the surface of a polymethylmethacrylate (PMMA) polymer. Current-voltage (I-V) measurements on the Al/colloidal ZnO QDs blended with PMMA polymer layer/indium-tin-oxide/glass devices at 300 K showed a current bistability. The maximum ON/OFF ratio of the current bistability for the organic bistable devices (OBDs) was as large as 5x10(4), and the cycling endurance time of the ON/OFF switching for the OBDs was above 10(5). The memory mechanisms of the fabricated OBDs are described on the basis of the I-V results.
키워드
aluminium; colloids; filled polymers; II-VI semiconductors; indium compounds; nanocomposites; quantum well devices; random-access storage; semiconductor quantum dots; semiconductor-metal boundaries; transmission electron microscopy; zinc compounds; Nanocomposites; Optical waveguides; Polyesters; Polymers; Semiconducting zinc compounds; Tin; Titanium compounds; Transmission electron microscopy; Zinc oxide; Semiconductor quantum dots; Bistabilities; Current-voltage measurements; Cycling endurances; Electrical bistabilities; Memory mechanisms; On/off ratios; Organic bistable devices; Polymer nanocomposites; Polymethylmethacrylate; Quantum dots; Transmission electron microscopy images; Zno; Zno quantum dots
- 제목
- Electrical bistabilities and memory mechanisms of organic bistable devices based on colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites
- 저자
- Son, Dong Ick; You, Chan Ho; Kim, Won Tae; Jung, Jae Hun; Kim, Tae Whan
- 발행일
- 2009-03
- 유형
- Article
- 권
- 94
- 호
- 13
- 페이지
- 1 ~ 3