Relevant, systematic variation of morphology and magnetism according to annealing in InMnP : Zn

  • Shon, Yoon; 
  • Lee, Seungwoong; 
  • Park, Chang-soo; 
  • Lee, Sejoon; 
  • Jeon, Hee Change; 
  • ... Yoon, Chong Seung; 
  • 외 4명
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SCOPUS

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초록

InMnP:Zn epilayers doped with Mn (0.290 at.%) were annealed at 723-873 K for 60 s and 473-573 K for 30 min. Using Auger electron spectroscopy, the changes in concentration profiles of the epilayers correlated to the ferromagnetic origin as a function of the annealing conditions. The epilayers annealed at 723-873 K for 60 s exhibited InMn3 persisting up to 583 K. For InMnP:Zn epilayers annealed at 523-573 K for 30 min, the concentration depth profiles remained flat so that the stoichiometry was well maintained without precipitates such as InMn3 and MnP comparable to the as-grown InP:Zn before doping Mn. These samples showed clear ferromagnetic hysteresis loops. Curie temperature was about 150 K. A ferromagnetic hysteresis loop was obtained even at very lower annealing temperature of 473 K.

키워드

MOCVD; MBE; InMnP : Zn epilayer; morphology; auger electron spectroscopy; hysteresis loop; SEMICONDUCTORS; MN; FERROMAGNETISM; GAP; INP
제목
Relevant, systematic variation of morphology and magnetism according to annealing in InMnP : Zn
저자
Shon, Yoon; Lee, Seungwoong; Park, Chang-soo; Lee, Sejoon; Jeon, Hee Change; Kim, Deukyoung; Kang, Taewon Wang; Yoon, Chong Seung; Kim, Eun Kyu; Lee, Jeoung Ju
DOI
10.1016/j.apsusc.2007.06.020
발행일
2007-09
유형
Article
저널명
Applied Surface Science
권
254
호
2
페이지
494 ~ 498