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Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
- Lee, Jong Hyun;
- Lee, Jun Seok;
- Cha, Seung Nam;
- Kim, Jong Min;
- Seo, Do Seok;
- ... Hong, Jin Pyo;
- 외 1명
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8초록
High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm(2.)V(-1)s(-1) and about 3 x 10(18.) cm(-3) at 600 degrees C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed.
키워드
ZnO; Aluminium-nitride codoped; p-type; Homojunction; OPTICAL-PROPERTIES
- 제목
- Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
- 저자
- Lee, Jong Hyun; Lee, Jun Seok; Cha, Seung Nam; Kim, Jong Min; Seo, Do Seok; Bin Im, Won; Hong, Jin Pyo
- 발행일
- 2009-05
- 유형
- Article; Proceedings Paper
- 저널명
- Thin Solid Films
- 권
- 517
- 호
- 14
- 페이지
- 3950 ~ 3953