Tunnel current through virus particles between columnar structures in mesoporous silicon

  • Vashpanov, Yuriy
  • Jung, Jae-Il
  • Dal Kwack, Kae
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초록

Earlier we reported on a tunnel charge transport mechanism in mesoporous silicon with columnar structures under adsorption of plant nematode-transmitted polyhedral (NEPO) viruses at room temperature. Additional experiments are performed in this paper to establish that this observed tunnel current is connected to a conduction path through virus particles. The plant NEPO viruses have an orbicular shape with a diameter of around 25-30 nm. This size is matched well to the porous size distribution in manufactured samples. The tunnel charge transport in semiconductor structures was not observed on loading protein macromolecules of smaller sizes. A physical mechanism of the observed phenomena can be interpreted to be the result of a shunting effect through virus particles between the two closely located columnar silicon structures. This effect is likely to result from double points at virus adsorption under the condition of matching of pore and virus sizes. The magnitudes of the tunnel barrier heights depend on the type of loaded plant viruses. The investigated columnar structures of mesoporous silicon can be used for research on the electrical properties of different viruses with corresponding sizes in the range of 20-30 nm. The existence of a tunnel current between columnar structures in mesoporous silicon under virus adsorption can be used as a simple method for their detection in the environment.

키워드

columnar structuresporous silicontunnelingvirusesTRANSPORTAdsorptionComputer virusesCrystals
제목
Tunnel current through virus particles between columnar structures in mesoporous silicon
저자
Vashpanov, YuriyJung, Jae-IlDal Kwack, Kae
DOI
10.1002/pssa.201026662
발행일
2011-07
유형
Article
저널명
Physica Status Solidi (A) Applications and Materials
208
7
페이지
1683 ~ 1687