ScholarWorks@한양대학교

상세 보기

Property of interfacial layer induced VFB shift in Al-related gate oxide deposited by remote plasma atomic layer deposition

  • 전형탁
제목
Property of interfacial layer induced VFB shift in Al-related gate oxide deposited by remote plasma atomic layer deposition
저자
전형탁
발행일
2010-10-19
학회명
AVS 57th international symposium & exhibition
개최지
NEW MEXICO, UNITED STATES OF AMERICA

ScholarWorks@한양대학교

(04763) 서울특별시 성동구 왕십리로 222 Tel. +82-2-2220-1370 +82-2-2220-1366

COPYRIGHT © 한양대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.