Transparent thin film transistors based on parallel array of si nanowires

Lee, Dong Hyun; Choung, Jae Woong; Pyun, Yong Bum; Son, Kwangsoo; Park, Won Il

doi:10.1109/INEC.2010.5424905

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Transparent thin film transistors based on parallel array of si nanowires

Lee, Dong Hyun;
Choung, Jae Woong;
Pyun, Yong Bum;
Son, Kwangsoo;
Park, Won Il

Citations

SCOPUS

2

초록

We report on the fabrication of fully transparent thin-film transistors (T-TFTs) by implementing the aligned silicon nanowires (SiNWs) and Ga-doped ZnO thin films as transparent channels and transparent conducting electrodes, respectively. The SiNWs aligned on the glass substrates are highly transparent in the visible spectral range, with a transmittance of ∼90 % for the NW density of ∼2-3 μm-1. In addition, polarization-dependent measurements reveal the variation of transmittance in the range of 75-95 % with respect to the angle between polarization of incident light and the NW axis. Gate dependent transport measurements demonstrated that the boron-doped SiNW devices behaved as p-type TFTs with good characteristics in terms of transconductance and switching behavior.

키워드

Boron-doped; Ga-doped ZnO; Glass substrates; Incident light; P-type; Parallel arrays; Si nanowire; Silicon nanowires; Switching behaviors; Transparent conducting electrodes; Transparent thin film transistor; Transport measurements; Visible spectral range; Boron; Conductive films; Gallium; Nanoelectronics; Nanowires; Polarization; Substrates; Thin films; Zinc oxide; Thin film transistors

제목: Transparent thin film transistors based on parallel array of si nanowires

저자: Lee, Dong Hyun; Choung, Jae Woong; Pyun, Yong Bum; Son, Kwangsoo; Park, Won Il

DOI: 10.1109/INEC.2010.5424905

발행일: 2010-03

유형: Conference Paper

저널명: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

페이지: 1282 ~ 1283