Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe₃O₄ films

초록

We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe3O4 films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe3O4 films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.

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