Atomic Layer Chemical Vapor Deposition of TiN Thin Film on Si(100) and Si(111)

초록

TiN thin films were deposited by an atomic layer chemical vapor deposition (AL-CVD) system on Si(100) and Si(111) substrates by cyclic exposures of TiCl4 and NH3. The growth rate was measured by the number of deposition cycles and its physical properties were compared with the TiN film grown by conventional deposition methods. To investigate the growth mechanism, the growth model of TiN was suggested for the calculation of growth rate per cycle with Cerius2 program. The results of calculation by the model were compared with experimental values of the TiN film deposited by AL-CVD method. The stoichiometry of chemical composition of TiN film was examined by AES and impurities of chloride and oxygen were examined. The XRD and TEM results exhibited the strong (200) peak and the randomly orented columnar microstructure and TiN film. The electrical resistivity of TiN film was found to decrease with increasing deposition temperatures. The densities of TiN film measured by RBS were between 4.2g/cm3 and 4.98g/cm3.