Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

초록

ZnO memory device with SnO2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of +/- 4 V and +/- 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 x 10(4) at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 x 10(3) after 10(3) s.

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