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Energy gap variation of InAs/GaAs quantum dots by arsenic flux and growth temperature during molecular beam epitaxy

  • 김은규
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Energy gap variation of InAs/GaAs quantum dots by arsenic flux and growth temperature during molecular beam epitaxy
저자
김은규
발행일
2012-08-28
학회명
Inter. Union of Materials Research Society-International Conference in Asia 2012
개최지
Busan, Korea

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