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초록
We fabricated the nano-floating gate memory (NFGM) devices on the polycrystalline silicon (poly-Si) films crystallized by excimer laser annealing (ELA) method for thin-film transistor liquid-crystal display (TFT-LCD) with a new integration technology called digital memory on glass (DMOG). The In2O3 nano-dots were formed in polyimide gate insulating layers at low temperature as the charge storages of nonvolatile memory for DMOG applications. The memory window of low temperature poly-Si TIFT nonvolatile memory with In2O3 nano-dots embedded in polyimide was larger than 3.2 V and the memory characteristics were considerably improved by 3% hydrogen diluted N-2 ambient annealing.
키워드
excimer laser annealing; low temperature poly-Si TFT; nonvolatile memory; In2O3 metal nano-dots; polyimide gate insulator; IN2O3; Annealing; Digital arithmetic; Digital devices; Display devices; Excimer lasers; Gas lasers; Glass; Hydrogen; Insulation; Integration; Liquid crystal displays; Polyimides; Polymers; Polysilicon; Semiconducting organic compounds; Silicon; Thin film devices; Thin film transistors
- 제목
- Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications
- 저자
- Koo, Hyun-Mo; Cho, Won-Ju; Lee, Dong Uk; Kim, Seon Pil; Kim, Eun Kyu; Jung, Jongwan
- 발행일
- 2008-04
- 유형
- Article; Proceedings Paper
- 권
- 47
- 호
- 4
- 페이지
- 2728 ~ 2732