Probing the multi-disordered nanoscale alloy at the interface of lateral heterostructure of MoS₂-WS₂

초록

Transition metal dichalcogenide (TMDs) heterostructure, particularly the lateral heterostructure of two different TMDs, is gaining attention as ultrathin photonic devices based on the charge transfer (CT) excitons generated at the junction. However, the characteristics of the interface of the lateral heterostructure, determining the electronic band structure and alignment at the heterojunction region, have rarely been studied due to the limited spatial resolution of nondestructive analysis systems. In this study, we investigated the confined phonons resulting from the phonon-disorder scattering process involving multiple disorders at the lateral heterostructure interface of MoS2-WS2 to prove the consequences of disorder-mediated deformation in the band structure. Moreover, we directly observed variations in the metal composition of the multi-disordered nanoscale alloy Mo1-xWxS2, consisting of atomic vacancies, crystal edges, and distinct nanocrystallites. Our findings through tip-enhanced Raman spectroscopy (TERS) imply that a tens of nanometer area of continuous TMDs alloy forms the multi-disordered interface of the lateral heterostructure. The results of this study could present the way for the evaluation of the TMDs lateral heterostructure for excitonic applications.

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