Antiferromagnetic ordering of dangling-bond electrons at the stepped Si(001) surface

  • Lee, Jun-Ho
  • Kim, Sun-Woo
  • Cho, Jun-Hyung
Citations

WEB OF SCIENCE

0
Citations

SCOPUS

0

초록

Using first-principles density-functional calculations, we explore the possibility of magnetic order at the rebonded D-B step of the Si(001) surface. The rebonded D-B step containing threefold coordinated Si atoms can be treated as a one-dimensional dangling-bond (DB) wire along the step edge. We find that Si atoms composing the step edge are displaced up and down alternatively due to Jahn-Teller-like distortion, but, if Si dimers on the terrace are passivated by H atoms, the antiferromagnetic (AFM) order can be stabilized at the step edge with a suppression of Jahn-Teller-like distortion. We also find that the energy preference of AFM order over Jahn-Teller-like distortion is enhanced in an oscillatory way as the length of DB wires decreases, showing the so-called quantum size effects.

키워드

SCANNING TUNNELING MICROSCOPEGRAPHENESTATELAYEREDGE
제목
Antiferromagnetic ordering of dangling-bond electrons at the stepped Si(001) surface
저자
Lee, Jun-HoKim, Sun-WooCho, Jun-Hyung
DOI
10.1063/1.4794162
발행일
2013-03
유형
Article
저널명
Journal of Chemical Physics
138
10
페이지
1 ~ 5

파일 다운로드