Electrical Bistabilities and Memory Mechanisms of Organic Bistable Devices Fabricated Utilizing SnO2 Nanoparticles Embedded in a Poly(methyl methacrylate) Layer

초록

Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) (PMMA) polymer layer were formed by using a spin coating method. Transmission electon microscopy images and photoluminescence spectra showed that synethized SnO2 nanoparticles were randomly distributed in the dibutyl ehter solution. Current-voltage (I-V) measurements on the Al/SnO2 nanoparticles embedded in PMMA layer/ITO devices at 300 K showed current bistability due to the existence of SnO2 nanoparticles. Current-time (I-t) results showed the memory retention characteristic of the device. Carrier transport mechanisms of the device are described on the basis of the I-V experimental results and electronic structures.

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