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Post-Annealing effect on the electrical properties of top-gated SWNT network transistors
초록
We have shown the post annealing effect on the I-V characteristics of the top-gated SWNT network transistors with alumina oxide (Al2O3) as a gate dielectric material. The dramatic change in the polarity of top-gated SWNT network transistors has been observed by post-annealing.
- 제목
- Post-Annealing effect on the electrical properties of top-gated SWNT network transistors
- 저자
- 박완준
- 발행일
- 2009-10-07
- 학회명
- l2009 International Conference on Solid State Devices and Materials
- 개최지
- 센다이, 일본