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초록
Hexagonal MnAs thin films were grown on GaAs (100) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.
키워드
crystal structure; molecular beam epitaxy; magnetic materials; MOLECULAR-BEAM EPITAXY; THIN-FILMS; MAGNETORESISTANCE; HETEROSTRUCTURES; STRAIN
- 제목
- Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (100) substrates
- 저자
- Kim, T. W.; Lee, Hoseong; Lee, Jeong Yong; Jeon, Hwan Chul; Kang, Tae Won
- 발행일
- 2006-06
- 유형
- Article
- 권
- 292
- 호
- 1
- 페이지
- 62 ~ 66