Growth of GaN branched alpha-Si3N4 nanowires on (100) Si by metal organic chemical vapor deposition

Park, Jinsub; Moon, Dae Young; Kim, Min Hwa; Park, Sung Hyun; Yoon, Euijoon

doi:10.1016/j.matlet.2012.02.061

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Growth of GaN branched alpha-Si3N4 nanowires on (100) Si by metal organic chemical vapor deposition

Park, Jinsub;
Moon, Dae Young;
Kim, Min Hwa;
Park, Sung Hyun;
Yoon, Euijoon

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3

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3

초록

We demonstrate the growth of alpha-Si3N4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si3N4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si3N4 nanowires. The possible growth mechanism of Si3N4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.

키워드

Si3N4; Nanowire; Branched nanowire; GaN; Synthesis methods; SILICON-NITRIDE; Gallium alloys; Gallium nitride; Metallorganic chemical vapor deposition

제목: Growth of GaN branched alpha-Si3N4 nanowires on (100) Si by metal organic chemical vapor deposition

저자: Park, Jinsub; Moon, Dae Young; Kim, Min Hwa; Park, Sung Hyun; Yoon, Euijoon

DOI: 10.1016/j.matlet.2012.02.061

발행일: 2012-06

유형: Article

저널명: Materials Letters

권: 76

페이지: 106 ~ 108