ScholarWorks@한양대학교

상세 보기

The characterization of HfO2/SixNy stack capacitor deposited by ECR plasma MOCVD

제목
The characterization of HfO2/SixNy stack capacitor deposited by ECR plasma MOCVD
저자
안진호
발행일
2003-02-27
학회명
제10회 한국반도체 학술대회
개최지
서울

ScholarWorks@한양대학교

(04763) 서울특별시 성동구 왕십리로 222 Tel. +82-2-2220-1370 +82-2-2220-1366

COPYRIGHT © 한양대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.