High color purity deep-blue light-emitting diodes with CIE coordinates of (0.134,0.066) based on covalently bonded metal-organic chalcogenolates

초록

Blue light-emitting diodes require emitters with high color purity, efficiency, and stability; however, conventional organic and perovskite-based materials remain limited by broad emission bandwidths, insufficient stability, or toxicity. Silver phenylselenolate (AgSePh), a representative metal-organic chalcogenolate (MOC), has emerged as a promising deep-blue emitter owing to its narrow emission bandwidth and chemically robust covalent structure. Here, we demonstrate electroluminescence from AgSePh thin films prepared via an integrated vapor deposition process that sequentially combines physical vapor deposition of a diphenyl diselenide (Ph2Se2) precursor with amine-assisted chemical vapor deposition. This vapor-phase approach enables controlled precursor delivery and supersaturation, leading to homogeneous formation of precursor quasi-films and their subsequent conversion into uniform, continuous AgSePh thin films. In contrast, solution-based processing results in significant morphological inhomogeneity. The improved film quality is consistent with a nucleation-growth mechanism governed by controlled supersaturation under vapor-phase conditions. The resulting AgSePh films exhibit deep-blue photoluminescence at 466 nm with a narrow full width at half maximum (FWHM) of similar to 17 nm and high color purity. When integrated into light-emitting diode structures, the films show electroluminescence at 466 nm with a FWHM of 16.6 nm and Commission Internationale de l'& Eacute;clairage coordinates of (0.134, 0.066). These results indicate the potential of MOCs as narrow-band deep-blue emitters for optoelectronic applications.

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