Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices

You, Joo Hyung; Kim, Hyun Woo; Kim, Dong Hun; Kim, Tae Whan; Lee, Keun Woo

doi:10.1109/SISPAD.2011.6035085

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Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices

You, Joo Hyung;
Kim, Hyun Woo;
Kim, Dong Hun;
Kim, Tae Whan;
Lee, Keun Woo

Citations

SCOPUS

11

초록

The trap distribution in the silicon-nitride layer, which was estimated by using experimental results, was used to clarify the retention characteristics of TaN-Al2O3-Si3N4-SiO2-Si (TANOS) memory devices. The dependence of the trap density and distribution of the silicon nitride layer on the retention characteristics in TANOS memory devices was investigated by using the two-coupled rate equations together with the Shockley- Reed statistics. Simulation results showed that the retention characteristics in TANOS memory devices increased with increasing trap density near and above the Fermi-level in the silicon-nitride layer. The simulation results for the retention characteristics of TANOS memory devices were in reasonable agreement with the experimental results. These observations can help improve understanding of the retention mechanisms and the reliability problems in charge trap flash (CTF) memory devices.

키워드

retention characteristics; silicon nitride; TANOS flash memory; trap distribution; Charge trap flash memories; Rate equations; Reliability problems; Retention characteristics; Retention mechanism; Simulation result; TANOS flash memory; Trap density; Trap distributions; Charge trapping; Equipment; Semiconducting silicon; Semiconductor devices; Silicon nitride; Silicon oxides; Tantalum compounds; Flash memory

제목: Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices

저자: You, Joo Hyung; Kim, Hyun Woo; Kim, Dong Hun; Kim, Tae Whan; Lee, Keun Woo

DOI: 10.1109/SISPAD.2011.6035085

발행일: 2011-09

유형: Conference Paper

저널명: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

페이지: 199 ~ 202