Dielectric Stacking Effect of Al2O3 and HfO2 in Metal-Insulator-Metal Capacitor

Park, In-Sung; Ryu, Kyoung-min; Jeong, Jaehack; Ahn, Jinho

doi:10.1109/LED.2012.2228162

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Dielectric Stacking Effect of Al2O3 and HfO2 in Metal-Insulator-Metal Capacitor

Park, In-Sung;
Ryu, Kyoung-min;
Jeong, Jaehack;
Ahn, Jinho

Citations

WEB OF SCIENCE

39

Citations

SCOPUS

46

초록

The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.

키워드

Aluminum oxide; dielectric stacking; hafnium oxide; high-kappa dielectrics; metal-insulator-metal (MIM) capacitor; LAMINATE MIM CAPACITORS; RF

제목: Dielectric Stacking Effect of Al2O3 and HfO2 in Metal-Insulator-Metal Capacitor

저자: Park, In-Sung; Ryu, Kyoung-min; Jeong, Jaehack; Ahn, Jinho

DOI: 10.1109/LED.2012.2228162

발행일: 2013-01

유형: Article

저널명: IEEE Electron Device Letters

권: 34

호: 1

페이지: 120 ~ 122