Optical properties of ZnO nanoparticles embedded in a silicon nitride layer formed by sputtering and thermal treatment

  • Oh, Do-Hyun
  • Cho, Woon-Jo
  • Kim, Tae Whan
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5

초록

Transmission electron microscopy images of annealed ZnO/silicon nitride (SiNx) multilayer grown on Si (100) substrates showed that the ZnO nanoparticles were formed inside the SiNx layer. The photoluminescence (PL) spectrum of a sample consisting of ZnO/SiNx multilayer with a SiNx buffer layer annealed at 800 degrees C showed that only a strong ultraviolet (UV) emission peak around 376 nm, corresponding to the ZnO nanoparticles, appeared in the visible range. The full width at half maximum of the UV peak of the PL spectrum was approximately 13 nm indicative of the high-quality of the ZnO nanoparticles. The optical properties of the ZnO nanoparticles were enhanced with increasing thickness of the deposited ZnO thin film

키워드

ZnO nanoparticlesSilicon nitride layerThermal annealing treatmentOptical propertiesQUANTUM-DOTELECTRON-SPINSYSTEM
제목
Optical properties of ZnO nanoparticles embedded in a silicon nitride layer formed by sputtering and thermal treatment
저자
Oh, Do-HyunCho, Woon-JoKim, Tae Whan
DOI
10.1016/j.cap.2008.12.053
발행일
2009-03
유형
Article; Proceedings Paper
저널명
Current Applied Physics
9
2
페이지
E173 ~ E175