Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer

Lee, Sejoon; Shon, Yoon; Kim, Deuk Young; Kang, Tae Won; Yoon, Chong S.

doi:10.1063/1.3294635

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Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer

Lee, Sejoon;
Shon, Yoon;
Kim, Deuk Young;
Kang, Tae Won;
Yoon, Chong S.

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34

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34

초록

Enhanced ferromagnetism was observed from the H2O2-treated p-type (Zn0.93Mn0.07)O:As layer. Compared with the untreated sample, the H2O2-treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (T-C similar to 280 K), the H2O2-treated sample exhibited to have the increased T-C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g-factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H2O2-treated sample.

키워드

arsenic; Curie temperature; deep levels; dilute magnetic materials; ferromagnetic materials; g-factor; II-VI semiconductors; impurity states; magnetic hysteresis; magnetic semiconductors; wide band gap semiconductors; zinc compounds; THIN-FILMS; MAGNETIC SEMICONDUCTORS; OXIDE FILMS; TRANSPARENT; SPINTRONICS; EXCHANGE; ORIGIN; GROWTH

제목: Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer

저자: Lee, Sejoon; Shon, Yoon; Kim, Deuk Young; Kang, Tae Won; Yoon, Chong S.

DOI: 10.1063/1.3294635

발행일: 2010-01

유형: Article

저널명: Applied Physics Letters

권: 96

호: 4

페이지: 1 ~ 3