저온 GaN의 성장 온도에 따른 에피택셜 GaN의 stress relaxation 효과

초록

To improve the crystallinity of GaN, there are researches on surface treatment to control the difference inphysical properties between GaN and heterogeneous substrate. ‘Low-temperature GaN (LT-GaN)’ is one of the ways tosolve the problem and we investigated the relationship between growth temperature and properties of LT-GaN in ourhomemade vertical type HVPE. The LT-GaN nuclei were formed on the sapphire surface at low growth temperatures andthey presented differences in the density and crystallinity depending on the growth temperature. Significantly, the stressrelaxation effect on the epitaxial GaN (epi-GaN) was affected by the crystallinity of LT-GaN. However, the highcrystallinity of LT-GaN exacerbated the crystal quality of epi-GaN because they worked as a catalyst and seed ofpolycrystalline.

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