Anti-reflective conducting indium oxide layer on nanostructured substrate as a function of aspect ratio

초록

Antireflective conducting indium oxide layers were deposited using atomic layer deposition on a transparent nanostructured substrate grown using colloidal lithography. In order to explain the changes in the electrical resistivity and the optical transmittance of conducting indium oxide layers depending on various aspect ratios of the nanostructured substrates, we investigated the surface area and refractive index of the indium oxide layers in the film depth direction as a function of aspect ratio. The conformal indium oxide layer on a transparent nanostructured substrate with optimized geometry exhibited transmittance of 88% and resistivity of 7.32 × 10⁻⁴ Ω cm. The enhancement of electrical resistivity is strongly correlated with the surface area of the indium oxide layer depending on the aspect ratio of the nanostructured substrates. In addition, the improvement in transparency was explained by the gradual changes of the refractive index in the film depth direction according to the aspect ratio of the nanostructures.

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