The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe/ZnTe quantum dots

  • Lee, Hong Seok
  • Park, Hong Lee
  • Kim, Tae Whan
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초록

Photoluminescence spectra showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the CdTe/ZnTe quantum dots (QDs) was shifted to a higher energy with increasing thickness of the ZnTe cap layer. The intensity of the excitonic peak related to the E-1-HH1 transition for the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer. The activation energy of the electrons confined in the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer.

키워드

CHEMICAL-VAPOR-DEPOSITIONCAP LAYERINFRARED PHOTODETECTORSNANOSTRUCTURES
제목
The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe/ZnTe quantum dots
저자
Lee, Hong SeokPark, Hong LeeKim, Tae Whan
DOI
10.1063/1.2841711
발행일
2008-02
유형
Article
저널명
Applied Physics Letters
92
5
페이지
1 ~ 3