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초록
Photoluminescence spectra showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the CdTe/ZnTe quantum dots (QDs) was shifted to a higher energy with increasing thickness of the ZnTe cap layer. The intensity of the excitonic peak related to the E-1-HH1 transition for the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer. The activation energy of the electrons confined in the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer.
키워드
CHEMICAL-VAPOR-DEPOSITION; CAP LAYER; INFRARED PHOTODETECTORS; NANOSTRUCTURES
- 제목
- The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe/ZnTe quantum dots
- 저자
- Lee, Hong Seok; Park, Hong Lee; Kim, Tae Whan
- 발행일
- 2008-02
- 유형
- Article
- 권
- 92
- 호
- 5
- 페이지
- 1 ~ 3