멀티 레벨 낸드 플래시 메모리용 연판정 복호를 수행하는 이진 ECC 설계를 위한 EM 알고리즘

초록

In this paper, we present two signal processing techniques for designing binary error correction codes for Multi-Level Cell(MLC) NAND flash memory. MLC NAND flash memory saves the non-binary symbol at each cell and shows asymmetric channel LLR l-density which makes it difficult to design soft-decision binary error correction codes such as LDPC codes and Polar codes. Therefore, we apply density mirroring and EM algorithm for approximating the MLC NAND flash memory channel to the binary-input memoryless channel. The density mirroring processes channel LLRs to satisfy roughly all-zero codeword assumption, and then EM algorithm is applied to l-density after density mirroring for approximating it to mixture of symmetric Gaussian densities. These two signal processing techniques make it possible to use conventional code design algorithms, such as density evolution and EXIT chart, for MLC NAND flash memory channel.

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