Atomic-Layer Deposited Oxide TFTs for Next-Gen Display and Memory Application

초록

Atomic-layer-deposited (ALD) indium gallium oxide (IGO) thin-film transistors (TFTs) are promising for next-generation display and memory applications due to their high mobility and excellent process controllability. Preferentially oriented crystalline IGO TFTs exhibit enhanced mobility and strong immunity to short-channel effects, while fully crystallized IGO maintains outstanding performance and reliability even after a DRAM-compatible 600 °C thermal budget. These improvements originate from suppressed defect formation and interfacial intermixing enabled by the crystalline lattice. This work highlights crystallographic engineering of ALD oxide semiconductors as a key strategy for extending oxide TFTs from high-resolution display backplanes to advanced memory and 3D-integrated electronics.

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