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Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
- Park, Sung Hyun;
- Park, Jinsub;
- You, Duck-Jae;
- Joo, Kisu;
- Moon, Daeyoung;
- 외 10명
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7초록
A simple and inexpensive technique to improve the emission efficiency of nonpolar a-plane light emitting diodes (LEDs) is proposed. The 3-dimensional growth nature of a-plane GaN was utilized to form the regrowth template of a-plane GaN. Subsequently, the controlled integration of silica nano-spheres (CIS) into the regrowth template is performed to improve the crystal quality of a-plane GaN by epitaxial lateral overgrowth method. In addition, the CIS improves light extraction by the scattering process. The light output power from the CIS a-plane GaN LEDs showed 130%-150% increase compared to that of LED without silica nano-spheres.
키워드
LATERAL OVERGROWTH; STACKING-FAULTS; THIN-FILMS; GROWTH; SAPPHIRE; NITRIDE; SI
- 제목
- Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
- 저자
- Park, Sung Hyun; Park, Jinsub; You, Duck-Jae; Joo, Kisu; Moon, Daeyoung; Jang, Jeonghwan; Kim, Donguk; Chang, Hojun; Moon, Sungnam; Song, Yoo-Kyung; Lee, Gun-Do; Jeon, Heonsu; Xu, Jimmy; Nanishi, Yasuishi; Yoon, Euijoon
- 발행일
- 2012-05
- 유형
- Article
- 권
- 100
- 호
- 19
- 페이지
- 1 ~ 4