Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer

  • Park, Sung Hyun
  • Park, Jinsub
  • You, Duck-Jae
  • Joo, Kisu
  • Moon, Daeyoung
  • 외 10명
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초록

A simple and inexpensive technique to improve the emission efficiency of nonpolar a-plane light emitting diodes (LEDs) is proposed. The 3-dimensional growth nature of a-plane GaN was utilized to form the regrowth template of a-plane GaN. Subsequently, the controlled integration of silica nano-spheres (CIS) into the regrowth template is performed to improve the crystal quality of a-plane GaN by epitaxial lateral overgrowth method. In addition, the CIS improves light extraction by the scattering process. The light output power from the CIS a-plane GaN LEDs showed 130%-150% increase compared to that of LED without silica nano-spheres.

키워드

LATERAL OVERGROWTHSTACKING-FAULTSTHIN-FILMSGROWTHSAPPHIRENITRIDESI
제목
Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
저자
Park, Sung HyunPark, JinsubYou, Duck-JaeJoo, KisuMoon, DaeyoungJang, JeonghwanKim, DongukChang, HojunMoon, SungnamSong, Yoo-KyungLee, Gun-DoJeon, HeonsuXu, JimmyNanishi, YasuishiYoon, Euijoon
DOI
10.1063/1.4716472
발행일
2012-05
유형
Article
저널명
Applied Physics Letters
100
19
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