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초록
MLC NAND flash memory has been widely used as a storage device in mobile and desktop computing systems. However, MLC NAND flash memory may cause a data loss problem because the LSB-page programmed data can be lost when a power failure occurs in the middle of a MSB-page program operation. In this paper, we propose a device-level voltage control scheme in order to overcome this problem. With the theoretical feasibility of our proposed scheme, the storage controller could fully restore the LSB-page programmed data at device-level after a power failure.
키워드
Data loss; Desktop computing; NAND flash memory; Power failure; Program operation; Storage power; Consumer electronics; Virtual storage; Voltage control; NAND circuits
- 제목
- Device-level voltage control scheme of MLC NAND flash memory for storage power failure recovery
- 저자
- Jung, Sanghyu; Song, Yong Ho
- 발행일
- 2013-01
- 유형
- Conference Paper
- 저널명
- Digest of Technical Papers - IEEE International Conference on Consumer Electronics
- 페이지
- 544 ~ 545