Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor

초록

Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing temperatures (T) below 200 degrees C. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, [Li+]/([In3+] + [Li+]), in the precursor solutions. Upon annealing the Li-assisted precursor films below 200 degrees C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline (InO3)-O-2 nanostructures after thermal dehydration and oxidation. Finally, an In2O3 film doped with 13.5 mol% Li+ and annealed at 250 degrees C for 1 h exhibited the highest electron mobility of 60 cm(2) V-1 s(-1) and an on/off current ratio above 10(8) when utilized in a thin film transistor.

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