Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film

  • Kwak, June Sik
  • Do, Young Ho
  • Bae, Yoon Cheol
  • Im, Hyunsik
  • Hong, Jin Pyo
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초록

Pt/CoOx/Pt tri-layers exhibited reproducible and stable unipolar switching under a dc sweeping voltage. In order to investigate the role of oxygen reduction in the metal-deficient CoOx layer, resistive switching of the post-annealed CoOx thin film was compared with those of the as-deposited CoO thin film. X-ray photoemission spectroscopy showed larger reproducible resistance switching and decreasing of current level in the post-annealed CoO thin film. This may be explained by a reduction in oxygen stoichiometry without phase transformation of the CoOx. In addition, stable switching in post-annealed CoOx layer is considered to originate from the decrease of the Co vacancies in local Co3O4 region partially distributed in the whole CoOx layer, not in the dominant CoO.

키워드

CoOxResistive switchingNonvolatile memoryReRAMRESISTANCEMEMORY
제목
Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film
저자
Kwak, June SikDo, Young HoBae, Yoon CheolIm, HyunsikHong, Jin Pyo
DOI
10.1016/j.tsf.2010.03.050
발행일
2010-09
유형
Article; Proceedings Paper
저널명
Thin Solid Films
518
22
페이지
6437 ~ 6440