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Magnetic and electronic properties of transition metal doped beta-SIC - a diluted magnetic semiconductor
- Kim, Yoon-Suk;
- Kim, Hanchul;
- Chung, Yong-Chae
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1초록
We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped beta-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 mu(B) regardless of substitution site. In addition, the SiC:Cr-Si is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices.
키워드
diluted magnetic semiconductor; beta-SiC; 3d transition metal; density functional theory; electronic structure; Electron mobility; Electronic properties; Energy gap; Ferromagnetism; Magnetic semiconductors
- 제목
- Magnetic and electronic properties of transition metal doped beta-SIC - a diluted magnetic semiconductor
- 저자
- Kim, Yoon-Suk; Kim, Hanchul; Chung, Yong-Chae
- 발행일
- 2006-08
- 유형
- Article; Proceedings Paper
- 권
- 317-318
- 페이지
- 889 ~ 892