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Novel Sense Amplifierto improve Sense Margin for Spin Transfer-Torque Magneto-resistive RAM
- Kil, Gyu-Hyun;
- Song, Yun Heub
초록
We present for a novel sense amplifier to greatly improve sense margin for spin-transfer-torque magneto-resistive RAM by using common source amplifier with current source load. The proposed sense amplifier can obtain the sense margin increased to 1000% at low read current and TMR ratio.
- 제목
- Novel Sense Amplifierto improve Sense Margin for Spin Transfer-Torque Magneto-resistive RAM
- 저자
- Kil, Gyu-Hyun; Song, Yun Heub
- 발행일
- 2014-01
- 유형
- Proceeding
- 저널명
- International Industrial Information Systems Conference 2014
- 페이지
- 72 ~ 73