상세 보기
초록
High quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 1018 cm-3. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and E c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.
키워드
Capacitance-voltage measurements; Deep-level transient spectroscopies; Electrical measurements; Electrical properties; High qualities; Magnetic elements; N-type semiconductors; Pulsed lasers; Wurtzite structures; Xrd measurements; ZnO films; Carrier concentration; Crystal structure; Deep level transient spectroscopy; Electric properties; Manganese; Manganese compounds; Nanobelts; Nanosensors; Nanowires; Oxygen; Oxygen vacancies; Pulsed laser deposition; Semiconducting zinc compounds; Semiconductor lasers; Single crystals; Thermoelectric equipment; Thin films; Wire; Zinc; Zinc oxide; Zinc sulfide; Cobalt
- 제목
- Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method
- 저자
- Kim, Jae-Hoon; Song, Hooyoung; Kim, Eun Kyu; Lee, Sejoon; Shon, Yoon
- 발행일
- 2008-05
- 유형
- Conference Paper
- 저널명
- ECS Transactions
- 권
- 16
- 호
- 12
- 페이지
- 27 ~ 31