Field enhancement effect by multi-tunnel layer in metal-silicide nanocrystals nonvolatile memory

초록

Nonvolatile memory devices with TiSi 2 and WSi 2 nanocrystals on the SiO 2/Si 3N 4/SiO 2 (ONO) and Si 3N 4/SiO 2/Si 3N 4 (NON) tunnel layers were fabricated and their electrical properties were characterized. For the WSi 2 nanocrystals memory, the threshold voltage shift (ΔV TH) maintained about 1.3 V at 125°C, when program/erase (P/E) speeds were 50 ms. After P/E at ±7 V for 100 ms, ΔV TH of the TiSi 2 memory with NON tunnel layer was about 0.7 V, while ΔV TH of the WSi 2 memory with ONO tunnel layer was approximately 1 V after applied P/E pulse at ±8 V for 50 ms.