상세 보기
Tailoring SS of a-IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences
- Hun Yoon, Seong;
- Seok Hur, Jae;
- Woong Bang, Seon;
- Kyeong Jeong, Jae
Citations
SCOPUS
0초록
We reported the fabrication of indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by plasma-enhanced atomic-layer-deposition (PEALD) process using different surface reactivities of the precursor-substrate combinations with controlled deposition sequences. In-Zn-Ga (Case II) exhibited favorable subthreshold swing (SS) values of 313 mV/decade, and moderate mobility (μFE) of 29.3 cm2/Vs compared to In-Ga-Zn (Case I) (84 mV/decade and 33.4 cm2/Vs).
키워드
atomic layer deposition; conversion mechanism; density functional theory; indium gallium zinc oxide; Oxide semiconductor; subthres hold swing; thin-film transistor; Carrier concentration; Defect density; Plasma CVD; Plasma enhanced chemical vapor deposition; Semiconducting gallium compounds; Semiconducting indium compounds; Semiconducting zinc compounds; Thin film circuits; Thin film transistors; Zinc alloys
- 제목
- Tailoring SS of a-IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences
- 저자
- Hun Yoon, Seong; Seok Hur, Jae; Woong Bang, Seon; Kyeong Jeong, Jae
- 발행일
- 2024-06
- 유형
- Conference paper
- 권
- 55
- 호
- 1
- 페이지
- 2253 ~ 2255
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- E 2168-0159
P 0097-966X