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Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application
- Kang, Shinyoung;
- Lee, Juyoung;
- Song, Yun Heub
Citations
SCOPUS
0초록
In this paper, an interfacial phase change memory (iPCM) based on superlattice (SL) structure was fabricated by stacking GeTe/Sb2Te3 alternatively, and synaptic characteristics such as linearity and symmetry of long-Term potentiation (LTP)/long-Term depression (LTD) were measured by Keithley 4200A-CSC parameter analyzer. The conventional phase change memory (PCM) based on Ge-Sb-Te alloy with the identical bottom electrode contact size was also fabricated for comparison.
키워드
artificial synaptic device; interfacial phase change memory; neuromorphic devices; phase change memory; superlattice; Antimony alloys; Germanium compounds; Programmable logic controllers; Artificial synapse; Bottom electrode contacts; Ge-Sb-Te alloys; Interfacial phase; Long-term potentiations; Parameter analyzer; Phase change memory (pcm); Superlattice structures; Phase change memory
- 제목
- Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application
- 저자
- Kang, Shinyoung; Lee, Juyoung; Song, Yun Heub
- 발행일
- 2020-10
- 유형
- Conference Paper
- 저널명
- Proceedings - International SoC Design Conference, ISOCC 2020
- 페이지
- 169 ~ 170
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 2 페이지