Advances in n-type crystalline oxide channel layers for thin-film transistors: materials, fabrication techniques, and device performance

초록

In this paper, we delve into recent advancements in the fabrication of high-performance n-type oxide semiconductor thin-film transistors (TFTs) through crystallization pathways. The last two decades have seen a rapid proliferation of applications employing amorphous oxide semiconductor (AOS) transistors, from display technologies to semiconductor chips. However, with the growing demand for ultra-high-resolution organic light-emitting diodes, flexible electronics, and next-generation electronic devices, interest in oxide semiconductors exhibiting high mobility and exceptional reliability has grown. However, AOS TFTs must balance the competing demands of mobility and stability. Here, we explore various crystallization methods of enhancing the device performance of oxide semiconductors, alongside the intrinsic challenges associated with crystalline oxide semiconductors. Our discussion highlights the potential solutions presented by controlling crystalline quality in terms of grain size and orientation. We propose that advanced manufacturing techniques coupled with a profound understanding of materials science are needed to effectively address these issues.

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