High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach

Min Hoe, Cho; Hyunjoo, Seol; Nuri, On; Tai Kyu, Kim; Pil Sang, Yun; Jong Uk, Bae; Kwon-Shik, Park; Jeong, Jae Kyeong

doi:10.1002/sdtp.13162

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High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach

Min Hoe, Cho;
Hyunjoo, Seol;
Nuri, On;
Tai Kyu, Kim;
Pil Sang, Yun;
... Jeong, Jae Kyeong;
외 2명

Citations

SCOPUS

3

초록

We report the effect of the cation composition on the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) which was deposited by atomic layer deposition (ALD). The In/In+Ga ratio of a-IGZO TFT was increased, enhancement of the field-effect mobility (µFE) value was observed. The device with a higher In/In+Ga ratio: the In0.45Ga0.15Zn0.40O transistor showed a higher µFE value of 48.3 cm2/Vs, VTH of −4.06 V, SS of 0.45 V/decade, and ION/OFF ratio of > 107. Simultaneously, Density of States (DOSs) profile in a forbidden band gap of the a-IGZO semiconductor were extracted based on the Meyer-Neldel rule (MN rule) to obtain an insight into the cation composition dependent performance of a-IGZO TFTs.

키워드

Indium gallium zinc oxide; thin-film transistor; atomic layer deposition; high mobility; density of state; Atomic layer deposition; Atoms; Energy gap; Field effect transistors; Gallium compounds; II-VI semiconductors; Positive ions; Semiconducting indium compounds; Thin film circuits; Thin films; Zinc oxide; Amorphous-indium gallium zinc oxides; Atomic-layer deposition; C. thin film transistor (TFT); Cation composition; Combinatorial approach; Densities of state; High mobility; Oxide thinfilm transistors (TFTs); Performance; Zinc oxide thin films; Thin film transistors

제목: High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach

저자: Min Hoe, Cho; Hyunjoo, Seol; Nuri, On; Tai Kyu, Kim; Pil Sang, Yun; Jong Uk, Bae; Kwon-Shik, Park; Jeong, Jae Kyeong

DOI: 10.1002/sdtp.13162

발행일: 2019-06

유형: Proceeding

저널명: Digest of Technical Papers - SID International Symposium

권: 50

호: 1

페이지: 1259 ~ 1262