ScholarWorks@한양대학교

상세 보기

Effect of the interface roughness of the high-k dielectric layer on the electron mobility in the channel of the MOSFETs

  • 김태환
제목
Effect of the interface roughness of the high-k dielectric layer on the electron mobility in the channel of the MOSFETs
저자
김태환
발행일
2014-12-07
학회명
The 17th International Symposium on the Physics of Semiconductors and Applications
개최지
Ramada Plaza Jeju Hotel, Jeju, Korea

ScholarWorks@한양대학교

(04763) 서울특별시 성동구 왕십리로 222 Tel. +82-2-2220-1370 +82-2-2220-1366

COPYRIGHT © 한양대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.