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High-Performance Amorphous InGaZnO Thin-Film Transistors via Staked Ultrathin High-k TaOx Buffer Layer Grown on Low-k SiO2 Gate Oxide
- Kang, Tae Sung;
- Yoon, Kap Soo;
- Baek, Gwang Ho;
- Ko, Won Bae;
- Yang, Seung Mo;
- ... Hong, Jin Pyo;
- 외 1명
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17초록
Efficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaOx buffer layer. This process allows for the fabrication of IGZO thin-film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of high-performance oxide-based TFTs.
키워드
IGZO TFTs; tantalum oxide; thermalization energy; thin film transistors; MOBILITY; METASTABILITY; SPECTROSCOPY; STABILITY; TFT
- 제목
- High-Performance Amorphous InGaZnO Thin-Film Transistors via Staked Ultrathin High-k TaOx Buffer Layer Grown on Low-k SiO2 Gate Oxide
- 저자
- Kang, Tae Sung; Yoon, Kap Soo; Baek, Gwang Ho; Ko, Won Bae; Yang, Seung Mo; Yeon, Bum Mo; Hong, Jin Pyo
- 발행일
- 2017-00
- 유형
- Article
- 권
- 3
- 호
- 3
- 페이지
- 1 ~ 8