Memory mechanisms of nonvolatile organic bistable devices based on colloidal CuInS2/ZnS core-shell quantum dot - Poly(N-vinylcarbazole) nanocomposites

초록

Organic bistable devices (OBDs) fabricated utilizing CuInS2 (CIS)/ZnS core-shell-type quantum dots (QDs) blended with a poly(N-vinylcarbazole) (PVK) layer were fabricated on polyethylene terephthalate (PET) substrates by using a spin-coating technique. Transmission electron microscopy images revealed that the CIS/ZnS QDs were distributed over the surface of the PVK layer. Current-voltage (I-V) curves for the Al/PVK + [CIS/ZnS QDs]/ITO/PET devices at 300 K showed that the maximum ON/OFF ratio of the current bistability for the OBDs was as large as 3.9 x 10(4). Memory mechanisms for the OBDs fabricated on PET substrates are described on the basis of the I-V results.

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