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Effect of organic amine in colloidal silica slurry on polishing-rate selectivity of copper to tantalum-nitride film in copper chemical mechanical planarization
- Park, Jin-Hyung;
- Cui, Hao;
- Hwang, Hee-Sub;
- Paik, Ungyu;
- Park, Hyung-Soon;
- 외 1명
Citations
SCOPUS
3초록
We investigated the effect of organic additives with amine functional group such as alanine and polyacrylamide (PAM) on the copper chemical mechanical planarization. We found that addition of alanine can significantly increase the copper polishing rate while slightly decrease the TaN polishing rate. We also concluded that small amount addition of PAM drastically suppress the TaN polishing rate. Both alanine and PAM can enhance the Cu-to-TaN removal selectivity. Finally, we also explained the interaction between organic additives and Cu/TaN film through the zetapotential.
키워드
Amine functional groups; Colloidal silicas; Copper chemical mechanical planarization; Copper polishing; Organic additives; Organic amines; Polishing rates; Polyacryl amides; Rate selectivities; Tantalum-nitride films; Zeta-potential; Amines; Architectural acoustics; Associative storage; Blood vessel prostheses; Chemical polishing; Copper; Functional groups; Nitrides; Organic compounds; Pneumatic drives; Polishing; Polymers; Pulse amplitude modulation; Silica; Tanning; Tantalum; Tantalum compounds; Transition metals; Chemical mechanical polishing
- 제목
- Effect of organic amine in colloidal silica slurry on polishing-rate selectivity of copper to tantalum-nitride film in copper chemical mechanical planarization
- 저자
- Park, Jin-Hyung; Cui, Hao; Hwang, Hee-Sub; Paik, Ungyu; Park, Hyung-Soon; Park, Jea-Gun
- 발행일
- 2008-05
- 유형
- Conference Paper
- 저널명
- ECS Transactions
- 권
- 13
- 호
- 4
- 페이지
- 51 ~ 57