IMT-2000 기지국용 3단 저잡음 증폭기 설계

초록

In this paper, a 3-stage low noise amplifier for IMT-2000 base-station was designed by using pHEMT ATF-54143 of HP Agilent. substrate matrial used to form matching circuit has relative permittivity(er) of 2.52(Teflon). The 3-stage LNA shows NF (Noise Figure) < 0.8dB, gain 40±0.5dB, ouput VSWR < 1.2 and OIP3 30.8dBm in 1.92~1.98GHz frequency band.