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Characteristics of HfOxNy Gate Dielectric Deposited by Plasma Enhanced Atomic Layer Deposition Method

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Characteristics of HfOxNy Gate Dielectric Deposited by Plasma Enhanced Atomic Layer Deposition Method
저자
전형탁
발행일
2004-08-17
학회명
Atomic Layer Deposition 2004(ALD`04)
개최지
Helsinki, Finland

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