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A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory
- Kang, Myounggon;
- Park, Ki-Tae;
- Song, Youngsun;
- Lew, Sungsoo;
- Song, Yunheub;
- 외 1명
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0초록
A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.
키워드
NAND; FLASH; row decoder; high voltage switch; low voltage; area scaling; low power; Memory architecture; NAND circuits; Area scaling; FLASH; High voltage switches; Low Power; Low voltages; NAND; Row decoder; Flash memory
- 제목
- A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory
- 저자
- Kang, Myounggon; Park, Ki-Tae; Song, Youngsun; Lew, Sungsoo; Song, Yunheub; Lim, Young-Ho
- 발행일
- 2010-02
- 유형
- Article
- 권
- E93C
- 호
- 2
- 페이지
- 182 ~ 186