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Resistive switching characteristics of HfO2 grown by atomic layer deposition
- Kim, Kyong-Rae;
- Park, In-Sung;
- Hong, Jin Pyo;
- Lee, Sang Seol;
- Choi, Bang Lim;
- ... Ahn, Jinho
WEB OF SCIENCE
21SCOPUS
22초록
Resistive switching characteristics of insulating HfO2 grown by the atomic layer deposition (ALD) technique were investigated. From I-V analyses of a Mo/HfO2/Mo device, the resistive switching behaviors were not symmetric for voltage polarity. These behaviors were well explained on the basis of the different top and bottom HfO2 interface states observed by X-ray photoelectron spectroscopy. For the as-deposited HfO2 film, a low resistance state showed an ohmic conduction behavior but a high resistance state showed a Poole-Frenkel mechanism. Moreover, the operation voltages to switch the resistance states were slightly increased by a 400 degrees C annealing process. The resistive switching behaviors are related to not only the defects in the insulator but also the electrode.
키워드
- 제목
- Resistive switching characteristics of HfO2 grown by atomic layer deposition
- 저자
- Kim, Kyong-Rae; Park, In-Sung; Hong, Jin Pyo; Lee, Sang Seol; Choi, Bang Lim; Ahn, Jinho
- 발행일
- 2006-12
- 유형
- Article; Proceedings Paper
- 권
- 49
- 페이지
- S548 ~ S551