Electrical characterization of flash memory structure with vanadium silicide nano-particles

초록

We fabricated vanadium silicide (V3Si) nano-particles embedded in silicon dioxide dielectric layer and characterized their charging effect to apply a non-volatile memory device. To create the V3Si nano-particles, the first post-annealing process in N-2 gas ambient by rapid thermal annealing method was done at 800 degrees C for 5 s. V3Si nano-particles with an average size of approximately 4-6 nm were distributed between the tunnel and control oxide layers. The channel length and width of the transistor are 5 mu m. This device maintained the memory window at about 1 V after 10(4) s, when applied program/erase voltages are +/- 9 V for 1 s. This result indicates that V3Si nano-particles have a high potential for non-volatile memory devices.

키워드