Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies

Ahn, Ju Hyun; Cai, Gangri; Mane, Rajararn S.; Todkar, V. V.; Shaikh, Arif V.; Chung, Hoeil; Yoon, Moon Young; Han, Sung Hwan

doi:10.1016/j.apsusc.2007.04.081

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Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies

Ahn, Ju Hyun;
Cai, Gangri;
Mane, Rajararn S.;
Todkar, V. V.;
Shaikh, Arif V.;
... Chung, Hoeil;
외 2명

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15

초록

Electrochemical synthesis of photoactive cadmium-indium-selenide (CdIn2Se4) thin films at ambient temperature was reported. The nanocrystalline nature and 1:2:4 elemental chemical stoichiometric ratio for Cd, In and Se were obtained from the X-ray diffraction and energy dispersive X-ray analysis, respectively. Irregular shaped islands of about 400-500 nm in sizes composed of large number of small (similar to 30-40 nm) spherical grains were confirmed from the atomic force microscopy and the scanning electron microscopy images. The photoelectrochemical measurement of CdIn2Se4 film electrode in presence of 1 M polysulphide electrolyte revealed 0.42% photoelectrochemical device conversion efficiency, under the light illumination intensity of 80 mW/cm(2).

키워드

electrochemical synthesis; CdInSe4 thin films; XRD; SEM; AFM; photoelectrochemical cell; PHOTOELECTROCHEMICAL CELLS; NANOSTRUCTURES; CDSE

제목: Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies

저자: Ahn, Ju Hyun; Cai, Gangri; Mane, Rajararn S.; Todkar, V. V.; Shaikh, Arif V.; Chung, Hoeil; Yoon, Moon Young; Han, Sung Hwan

DOI: 10.1016/j.apsusc.2007.04.081

발행일: 2007-08

유형: Article

저널명: Applied Surface Science

권: 253

호: 21

페이지: 8588 ~ 8591